AP6N100H advanced power n-channel enhancement mode electronics corp. power mosfet 100% r g & uis test bv dss 60v simple drive requirement r ds(on) 100m fast switching characteristic i d 7.5a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w e as single pulse avalanche energy 4 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 10 /w rthj-a 62.5 /w data and specifications subject to change without notice halogen-free product 8.8 parameter rating drain-source voltage 60 gate-source voltage + 20 drain current, v gs @ 10v 7.5 storage temperature range drain current, v gs @ 10v 4.7 pulsed drain current 1 30 total power dissipation 12.5 -55 to 150 total power dissipation 2 operating junction temperature range -55 to 150 201611141 thermal data parameter 1 maximum thermal resistance, junction-ambient (pcb mount) 3 g d s g d s to-252(h) a p6n100 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5a - - 100 m v gs =4.5v, i d =3a - - 125 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =5a - 14 - s i dss drain-source leakage current v ds =48v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =5a - 10 16 nc q gs gate-source charge v ds =48v - 1.5 - nc q gd gate-drain ("miller") charge v gs =10v - 2 - nc t d(on) turn-on delay time v ds =30v - 4 - ns t r rise time i d =5a - 11 - ns t d(off) turn-off delay time r g =3.3 -13- ns t f fall time v gs =10v - 2 - ns c iss input capacitance v gs =0v - 420 672 pf c oss output capacitance v ds =30v - 32 - pf c rss reverse transfer capacitance f=1.0mhz - 24 - pf r g gate resistance f=1.0mhz - 0.9 1.8 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =5a, v gs =0v - - 1.3 v t rr reverse recovery time i s =5a, v gs =0 v , - 11 - ns q rr reverse recovery charge di/dt=100a/s - 6 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board 4.starting t j =25 o c , v dd =30v , l=1mh , r g =25 this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP6N100H .
AP6N100H fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 4 8 12 16 20 24 024681012 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 4 8 12 16 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 6.0v 5.0v v g = 4.0v t c = 150 o c 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =5a v gs =10v 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) i d =250ua 60 64 68 72 76 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =3a t c =25 o c .
AP6N100H fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. drain current v.s. case fig 12. normalized bv dss v.s. junction temperature temperature 4 0 2 4 6 8 10 12 024681012 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =5a v ds =48v 0 200 400 600 800 1000 1 21416181 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 10us 100us 1ms 10ms dc operation in this area limited by r ds(on) 0 2 4 6 8 10 12 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d =1ma .
AP6N100H fig 13. typ. drain-source on state fig 14. total power dissipation resistance fig 15. transfer characteristics 5 0 100 200 300 400 0 4 8 12 16 20 i d , drain current (a) r ds(on) (m ) t j =25 o c 4.5v v gs =10v 0 4 8 12 16 20 0 50 100 150 t c , case temperature( o c) p d , power dissipation(w) 0 4 8 12 16 012345 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -55 o c .
marking information AP6N100H 6 part numbe r date code (ywwsss) y last digit of the year ww week sss sequence 6n100 ywwsss .
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